c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2012 www. ruichips .com ru 3582 s n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t a = 25 c unless otherwise noted) v dss drain - source voltage 40 v v gss gate - source voltage 2 0 t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 10 0 a mounted on large heat si nk i d p 300 s pulse drain current tested t c =25 c 4 0 0 a i d continuous drain current ( v gs =10v) t c =25 c 10 0 a t c =100 c 7 3 p d maximum power dissipation t c =25 c 1 07 w t c =100 c 53 r q jc thermal resistance - junction to case 1.4 c /w drain - source avala nche ratings e as avalanche energy, single pulsed 576 m j ? 4 0 v/ 100 a, r ds ( on ) = 5 m w ( t yp. ) @ v gs =10v ? ultra low on - resistance ? fast swi tching ? 100% avalanche tested ? 175c operating temperature ? lead free ,rohs compliant ? switching a pplication systems ? ups absolute maximum ratings n - channel mosfe t to - 263
c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2012 2 www. ruichips .com ru 3582 s electrical characteristics ( t a =25 c unless otherwise noted) symbol parameter test condition ru 358 2 s unit min. typ. max. static characteristics bv dss drain - sou rce breakdown voltage v gs =0v, i ds =250 m a 4 0 v i dss zero gate voltage drain current v ds = 4 0 v, v gs =0v 1 m a t j =85 c 30 v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 2 0 v, v ds =0v 100 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 4 0 a 5 6.5 m w notes : calculated continuous current based on maximum allowable junction temperature. current limited by bond wire. package limitation current is 75a . pulse width limited by safe operating area. limited by t jmax , i as = 48 a, v dd = 48v, r g = 47 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 4 0 a, v gs =0v 1. 2 v t rr reverse recovery time i sd = 4 0 a, dl sd /dt=100a/ m s 2 4 ns q rr reverse recovery charge 18 nc dynamic charac teristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 8 w c iss input capacitance v gs =0v, v ds = 32 v, frequency=1.0mhz 211 0 pf c oss output capacitance 480 c rss reverse transfer capacitance 260 t d ( on ) turn - on delay time v dd = 2 0 v, r l = 3 5 w , i ds = 4 0 a , v gen = 10v, r g = 4 w 1 5 ns t r turn - on rise time 9 5 t d ( off ) turn - off delay time 3 3 t f turn - off fall time 28 gate charge characteristics q g total gate charge v ds = 32 v, v gs = 10v, i ds = 4 0 a 95 120 nc q gs gate - source charge 17 q gd gate - dra in charge 38
c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2012 3 www. ruichips .com ru 3582 s typical characteristics power dissipation drain current p tot - power ( w) i d - dra in current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2012 4 www. ruichips .com ru 3582 s typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current ( a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2012 5 www. ruichips .com ru 3582 s typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction tempera ture (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2012 6 www. ruichips .com ru 3582 s avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2012 7 www. ruichips .com ru 3582 s ordering and marking information device marking package packaging quantity reel size tape width ru 3582 s ru3582 s to - 2 63 tube 50 - -
c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2012 8 www. ruichips .com ru 3582 s package information to - 263 - 2l all dimensions refer to jedec standard do not include mold flash or protrusions symbol mm inch symbol mm inch min nom max min nom max min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 l 2.00 2.30 2.60 0.079 0.090 0.102 a1 0 0.10 0.25 0 0.004 0.010 l3 1.17 1.27 1.40 0.046 0.050 0.055 a2 2.59 2.69 2.79 0.102 0.106 0.110 l1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 l4 0.25bsc 0.01bsc b1 1.23 - 1.36 0.048 - 0.052 l2 2.50ref. 0.098ref. c 0.34 - 0.47 0.013 - 0.019 0 - 8 0 - 8 c1 1.22 - 1.32 0 .048 - 0.052 1 5 7 9 5 7 9 d 8.60 8.70 8.80 0.338 0.343 0.346 2 1 3 5 1 3 5 e 10.00 10.16 10.26 0.394 0.4 0.404 dep 0.05 0.10 0.20 0.002 0.004 0.008 e 2.54bsc 0.1bsc ?p1 1.40 1.50 1.60 0.055 0.059 0.063 h 14.70 15.10 15.50 0.579 0.594 0.6 10
c opyright ruichips semiconductor co . , ltd rev . c C oct ., 2012 9 www. ruichips .com ru 3582 s customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.c om marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : ( 86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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